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FJPF6806D
FJPF6806D
High Voltage Color Display Horizontal Deflection Output (Damper Diode Built In)
* High Collector-Base Breakdown Voltage : BVCBO = 1500V * High Switching Speed : tF(typ.) =0.1s * For Color TV
1
TO-220F 2.Collector 3.Emitter
1.Base
Equivalent Circuit C
B
NPN Triple Diffused Planar Silicon Transistor
Absolute Maximum Ratings TC=25C unless otherwise noted
Symbol VCBO VCEO VEBO IC ICP* PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
50 typ. E
Rating 1500 750 6 6 12 40 150 -55 ~ 150
Units V V V A A W C C
* Pulse Test: Pulse Width=5ms, Duty Cycle < 10%
Electrical Characteristics TC=25C unless otherwise noted
Symbol ICES ICBO IEBO BVEBO hFE1 hFE2 VCE(sat) VBE(sat) VF tSTG* tF* Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Base-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Turn On Voltage Storage Time Fall Time Test Conditions VCB=1400V, RBE=0 VCB=800V, IE=0 VEB=4V, IC=0 IE=300mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=4A IC=4A, IB=1A IC=4A, IB=1A IF = 4.5A VCC=200V, IC=4A, RL=50 IB1=1.0A, IB2= - 2.0A 40 6 8 4 7 5 1.5 2 3 0.2 V V V s s Min Typ Max 1 10 200 Units mA A mA V
* Pulse Test: PW=20s, duty Cycle=1% Pulsed
Thermal Characteristics TC=25C unless otherwise noted
Symbol RjC Parameter Thermal Resistance, Junction to Case Typ Max 3.1 Units C/W
(c)2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJPF6806D
Typical Characteristics
8 100
VCE = 5V
7
IC [A], COLLECTOR CURRENT
IB = 2.0A
HFE, DC CURRENT GAIN
6
Ta = 125 C
o
5
IB = 0.8A
4
IB = 0.6A IB = 0.4A IB = 0.2A
10
3
Ta = 25 C Ta = - 25 C
o
o
2
1
0 0 2 4 6 8 10
1 0.1
1
10
VCE [V], COLLECTOR-EMITTER VOLTAGE
IC [A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
10
10
VCE(sat) [V], SATURATION VOLTAGE
VCE(sat) [V], SATURATION VOLTAGE
IC = 5 IB
Ta = 125 C
o
IC = 3 IB
Ta = 125 C
o
Ta = 25 C
1
o
1
Ta = 25 C Ta = - 25 C
0.1
o
o
Ta = - 25 C
0.1
o
0.01 0.1
1
10
0.01 0.1
1
10
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Collector-Emitter Saturation Voltage
10
VCE = 5 V
8
tSTG & tF [s], SWITCHING TIME
IC [A], COLLECTOR CURRENT
tSTG
1
6
4
Ta = 25 C
o
2
Ta = 125 C Ta = - 25 C
o
o
tF
VCC = 200V, IC = 4A, IB1 = 1A
0.1 1
0 0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VBE [V], BASE-EMITTER ON VOLTAGE
IB2 [A], REVERSE BASE CURRENT
Figure 5. Base-Emitter On Voltage
Figure 6. Resistive Load Switching Time
(c)2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJPF6806D
Typical Characteristics (Continued)
10
tSTG & tF [s], SWITCHING TIME
tSTG
tSTG & tF [s], SWITCHING TIME
VCC = 200V, IC = 4A, IB2 = - 2A
tSTG
1
1
tF
tF
VCC = 200V, IB1 = 1A,IB2 = - 2A
0.1 1 10
0.1 1
IB1 [A], FORWARD BASE CURRENT
IC [A], COLLECTOR CURRENT
Figure 7. Resistive Load Switching Time
Figure 8. Resistive Load Switching Time
15
100
IC [A], COLLECTOR CURRENT
IC [A], COLLECTOR CURRENT
12
RB2 = 0, IB1 = 15A VCC = 30V, L = 200H
IC (Pulse)
10
t = 100ms
t = 10ms
IC (DC)
t = 1ms
9
1
6
V BE(off) = -3V
3
0.1
TC = 25 C Single Pulse
0.01 1 10 100 1000 10000
o
1
10 100 1000 10000
VCE [V], COLLECTOR-EMITTER VOLTAGE
VCE [V], COLECTOR-EMITTER VOLTAGE
Figure 9. Reverse Bias Safe Operating Area
Figure 10. Forward Bias Safe Operating Area
80
70
PD [W], POWER DISSIPATION
60
50
40
30
20
10
0 0 25 50
o
75
100
125
150
175
200
TC [ C], CASE TEMPERATURE
Figure 11. Power Derating
(c)2002 Fairchild Semiconductor Corporation
Rev. A, July 2002
FJPF6806D
Package Demensions
TO-220F
3.30 0.10
10.16 0.20 (7.00)
o3.18 0.10
2.54 0.20 (0.70)
6.68 0.20
15.80 0.20
(1.00x45)
MAX1.47
9.75 0.30
0.80 0.10
(3 ) 0
0.35 0.10 2.54TYP [2.54 0.20]
#1 0.50 -0.05 2.54TYP [2.54 0.20]
4.70 0.20
+0.10
2.76 0.20
9.40 0.20
Dimensions in Millimeters
(c)2002 Fairchild Semiconductor Corporation Rev. A, July 2002
15.87 0.20
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet seriesTM FAST(R)
DISCLAIMER
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R)
SMART STARTTM VCXTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET(R)
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2002 Fairchild Semiconductor Corporation
Rev. H7

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